COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. 2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various electronic circuits. MARKING: FULL PART NUMBER TO-3 CASE 1. Other Names. *This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information. 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Absolute maximum rating Symbol Parameter Value NPN 2N3055 Unit PNP MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER Collector-emitter voltage (RBE = 100 Ω) 70 V VCEO Collector-emitter 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Order today, ships today. COMPLEMENTARY SILICON POWER TRANSISTORS. 2N3055 (NPN), MJ2955 (PNP) Preferred Device. 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistorsdesigned for general−purpose switching and amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices. MJ2955: 112Kb / 3P: Silicon PNP Power Transistors MJ2955: 114Kb / 3P: Silicon NPN Power Transistors Mospec Semiconductor: MJ2955A 193Kb / 4P: POWER TRANSISTORS(15A) Motorola, Inc: MJ2955A 235Kb / 6P: 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 View results and find MJ2955 datasheets and circuit and application notes in pdf format. You have access to a large number of CAD formats to fit with your design toolchain. File Size: 130. Principales características Número de Parte: MJ2955 Material: Si Polaridad de transistor: PNP ESPECIFICACIONES MÁXIMAS Disipación total del dispositivo (Pc): 150 W Tensión colector-base (Vcb): 100 V Tensión colector-emisor (Vce): 60 V Tensión emisor-base (Veb): 7 V Electronic Components Distributor - Mouser Electronics The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. General Aug 2, 2021 · Absolute maximun rating 2N3055 MJ2955 2/7 1 Absolute maximun rating Table 2. com ] MJE2955 Datasheet (PDF) - Mospec Semiconductor: Part # MJE2955: Download MJE2955 Download: File Size 123. Figure 1. MJ2955, 2N3055 Datasheet. The complementary PNP type is MJE2955T. The MJ2955 is a silicon PNP transistor in a TO−3 type case designed for general purpose switching and amplifier applications. 69 Kbytes: Page 3 Pages : Manufacturer: MOSPEC [Mospec MJE2955T MJE3055T. Absolute maximum rating Note: For PNP type voltage and current values are negative Symbol Parameter Value Unit NPN 2N3055 PNP MJ2955 VCBO Collector-emitter voltage (I E = 0) 100 V VCER Collector-emitter voltage (R BE = 100 Ω) 70 V VCEO Collector-emitter voltage (I B Step 1: Figure 1: LM317 Current Boosting Circuit Using MJ2955. Part #: TIP36C. The complementary transistor of 2N3055 is the MJ2955 PNP transistor. 2N3055_MJ2955 manufactured by: 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS Others with the same file for datasheet: Part #: MJ2955. The 10R resistor defines the Turn-On time of the pass-transistor and by the way, it defines how much current should passe through the LM317 and MJ2955 [3, 4]. File Size: 130Kbytes. . Check part details, parametric & specs updated 29 OCT 2023 and download pdf datasheet from datasheets. VCE(sat) = 1. 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS. Individually tested Components: YES. Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, MJ2955 Multicomp - Datasheet PDF & Technical Specs MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications. ≤. 64Kb / 1P. 2N3055/D. Replacement and Equivalent for MJ2955 transistor. 130Kb / 4P. 1N4007 is a protective diode and 270R resistor Continental Device India Limited's MJ2955 is a pnp silicon planar power transistor. Description: 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS. 5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-225AA POWER TRANSISTORS NPN SILICON CASE 77-09 TO-225AA TYPE From old datasheet system Description. Availability: Out Of Stock. 1. MJ2955 Datasheet(PDF) 1 Page - ON Semiconductor: Part # MJ2955: Description Complementary Silicon Power Transistors: Download 4 Pages: Scroll/Zoom: 100% MJ2955 TIN/LEAD Central Semiconductor Bipolar Transistors - BJT 100Vcbo 70Vcer 60Vceo 15A 115W datasheet, inventory, & pricing. 2. 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS, MJ2955 Datasheet, MJ2955 circuit, MJ2955 data sheet : MOTOROLA, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. 5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-225AA POWER TRANSISTORS NPN SILICON CASE 77-09 TO-225AA TYPE From old datasheet system The complementary NPN transistor to the MJ2955 is the 2N3055. 1 Vdc (Max) @ IC = 4 Adc Download MJ2955 Datasheet. Wing Shing Computer Com MJ2955. MJ2955 Datasheet POWER TRANSISTORS(15A,50V,115W) - Mospec Semiconductor SILICON PLANAR POWER TRANSISTORS, Continental Device India Limited MJ2955A Others with the same file for datasheet: 2N3055H: Download MJ2955 datasheet from ON Semiconductor: pdf 87 kb : Silicon PNP Power Transistors TO-3 package: Download MJ2955 datasheet from Savantic: pdf 110 kb : COMPLEMENTARY SILICON POWER TRANSISTORS: Download MJ2955 datasheet from SGS Thomson Microelectronics: pdf 52 kb : COMPLEMENTARY SILICON MJ2955 STMicroelectronics Bipolar Transistors - BJT PNP Power Switching datasheet, inventory & pricing. Manufacturer: ON Semiconductor. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1. Complementary Power Transistors. •DC Current Gain − hFE = 20−70 @ IC = 4 Adc •Collector−Emitter Saturation Voltage − VCE(sat) = 1. uk. Page: 3 Pages. Start your design with SamacSys. STMicroelectronics PREFERRED SALESTYPES. 0A. The complem ent ary PNP type is MJ2955. designed for general–purpose switching and amplifier applications. 1V STMicroelectronics - MJ2955. For more information please check. PNP PLANAR SILICON TRANSISTOR (AUDIO POWER AMPLIFIER DC TO DC CONVERTER) Boca Semiconductor Corp MJ2955 ST Microelectronics 双极性晶体管芯片中文资料PDF, 共(7)页, MJ2955数据手册有芯片封装TO-3和参数资料, STMICROELECTRONICS MJ2955 单晶体管 双极, PNP, -60 V, 2. Complementary silicon power transistors are designed for. Size:90K st 2n3055 mj2955 2. Page: 4 Pages. DESCRIPTION The is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. MJ2955 STMicroelectronics Bipolar Transistors - BJT PNP Power Switching datasheet, inventory & pricing. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity MJ2955 STMicroelectronics Bipolar Transistors - BJT PNP Power Switching datasheet, inventory & pricing. Apr 6, 2024 · onsemi's MJ2955 is a trans gp bjt pnp 60v 15a 115000mw 3-pin(2+tab) to-3 tray. Manufacturer: Motorola, Inc. ECOPACK is an ST trademark. Download. Check part details, parametric & specs updated 06-APR-2024 and download pdf datasheet from datasheets. com ] Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features: DC Current Gain: hFE = 20 − 70 @ IC = 4A Collector−Emitter Saturation Voltage: VCE(sat) = 1. 2N3055 Product details. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc. 2N3055 (NPN) MJ2955 (PNP) designed for general–purpose switching and amplifier applications. • DC current gain hFE = 20 to 70 at IC = 4. • DC Current Gain — hFE = 20–70 @ IC = 4 Adc• Collector–Emitter Saturation Voltage —VCE(sat) = 1. Central Semiconductor offers a wide range of products including diodes, rectifiers, transistors, and other discrete semiconductors. This article enforces datasheet, pinout, applications, schematic, and other details about MJ2955 Datasheet(PDF) 4 Page - STMicroelectronics: Part # MJ2955: Description COMPLEMENTARY SILICON POWER TRANSISTORS: Download 4 Pages: Scroll/Zoom: 100% : Manufacturer MJ2955 Complementary Silicon Power Transistors . Central Semiconductor Corp is a leading provider of discrete semiconductors and passive components. ) 1. TC is variable depending on conditions. Absolute maximum rating Symbol Parameter Value NPN 2N3055 Unit PNP MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER Collector-emitter voltage (RBE = 100 Ω) 70 V VCEO Collector-emitter 2N3055 MJ2955. High Current Gain (hFE): The MJ2955 typically has a high DC current gain (hFE), allowing for efficient amplification of input signals in MJ2955 Silicon PNP Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package Description: The MJ2955 is a silicon PNP transistor in a TO−3 type case designed for general purpose switching and amplifier applications. 0A, IB = 400mA. It is intended for power switching circuits and general-purpose amplifiers. It is intended for power switching circuits, series and shunt regulators, Step 1: Figure 1: LM317 Current Boosting Circuit Using MJ2955. 46 Kbytes. 2. Package: TO-224AA (TO-3) Download Motorola MJ2955 datasheet: Status: NOS (New Old Stock) slight tarnishing hence reduced price. The company was founded in 1967 and is headquartered in Hauppauge, New York, USA. Datasheet. TO-220. 5 MHz, 115 W, -15 A, 70 hFE。 [MJ2955 2N3055 Datasheet PDF Downlaod from Maxim4U. MJ2955 . Features: • Power dissipation - PD = 115W at TC = 25°C. 01 Kbytes. From old datasheet system: Diotec Semiconductor AG SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] Siemens Semiconductor G BD135 BD139 ON0184 BD137 : Plastic Medium Power Silicon NPN Transistor 1. 1N4007 is a protective diode and 270R resistor View 2N3055, MJ2955 by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey. Based on this parameter, the power rate of the resistor must be calculated. Description: COMPLEMENTARY SILICON POWER TRANSISTORS. It is an NPN (negative-positive-negative) transistor with a maximum collector current of 15 amps and a maximum collector-emitter voltage of 60 volts. 2N3055 is used in linear power supplies as a series pass transistor. File Size: 47. DC Current Gain − hFE = 20−70 @ IC = 4 Adc Collector−Emitter Saturation Voltage −. , Ltd, MJ2955 1 page Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits Absolute maximum rating 2N3055, MJ2955 2/7 DocID4079 Rev 8 1 Absolute maximum rating Note: For PNP type voltage and current values are negative Table 2. general−purpose switching and amplifier applications. MJ2955 silicon PNP Transistor by Motorola. The maximum ratings related to soldering conditions are also marked on the inner box label. Features. 0. MJ2955 Datasheet(PDF) 1 Page - Mospec Semiconductor: Part # MJ2955: Description POWER TRANSISTORS(15A,50V,115W): Download 3 Pages: Scroll/Zoom: 100% : Manufacturer 2N3055 MJ2955. Absolute maximum rating 2N3055, MJ2955 2/7 DocID4079 Rev 8 1 Absolute maximum rating Note: For PNP type voltage and current values are negative Table 2. For a full datasheet please contact sales@semelab. These packages have a Lead-free second level interconnect . General Motorola, Inc. STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES. Absolute maximum rating Symbol Parameter Value NPN 2N3055 Unit PNP MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER Collector-emitter voltage (RBE = 100 Ω) 70 V VCEO Collector-emitter Jan 21, 2021 · A1941 Datasheet - Vceo=-140V, PNP Power Transistor - Toshiba, 2SA1941 datasheet, A1941 pdf, A1941 pinout, A1941 manual, A1941 schematic, A1941 equivalent. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. Datasheet: Description: Mospec Semiconductor: MJ2955: 167Kb / 3P: POWER TRANSISTORS(15A,50V,115W) Central Semiconductor C MJ2955: 493Kb / 2P: COMPLEMENTARY SILICON POWER TRANSISTORS Motorola, Inc: MJ2955: 130Kb / 4P: 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS Wing Shing Computer Com MJ2955: 64Kb / 1P: PNP PLANAR [MJ2955 2N3055 Datasheet PDF Downlaod from Maxim4U. Standard Package. 1 Vdc (Max) @ IC = 4 Adc •Excellent Safe Operating Area •Pb−Free Package is Available High Collector-Emitter Voltage (VCEO): The MJ2955 is capable of handling relatively high collector-emitter voltage levels, typically up to 60 volts or more, making it suitable for high-voltage applications. Emitter. Part #: MJ2955. COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. Download MJ2955 Datasheet. The Datasheet Archive MJ2955: USHA Silicon power transistor. Mar 27, 2024 · The MJ2955 transistor is a high power PNP bipolar junction transistor (BJT) used in a wide variety of electronic circuits and is especially suited for power amplifier circuits and voltage regulation applications. 2368-MJ2955. The 2N3055 transistor has been in use since the 1960s and is still widely Part #: MJ2955. in the bipolar transistors, gp bjt category. View results and find MJ2955 datasheets and circuit and application notes in pdf format. 4 days ago · MJ2955 STMicroelectronics Bipolar Transistors - BJT PNP Power Switching datasheet, inventory, & pricing. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150°C. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity General Purpose and Switching Applications. MJ2955 Datasheet : Complementary Silicon power transistors (15A / 60V / 115W), MJ2955 PDF VIEW Download Nell Semiconductor Co. co. It is also suitable for high-power applications. Reemplazo. View datasheets for 2N3055, MJ2955 by STMicroelectronics and other related components here. pdf 2N3055MJ2955Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier12DescriptionTO-3The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. There are other manufacturers for this components. • DC Current Gain − hFE = 20−70 @ IC = 4 Adc. RoHS compliant: no. Manufacturer: STMicroelectronics. Mar 21, 2024 · 2N3055 Complementary Transistor. Please select one model supplier : Start your design with UltraLibrarian. Skip to Main Content +44 (0) 1494-427500 MJ2955 Datasheet Aug 15, 2021 · How to make fish shock Electric machine by using transistor MJ2955 x 8 (part1) Bipolar Transistors - BJT PNP Power Switching. The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. 1Motorola Bipolar Power Transistor Device DataComplementary Silicon PowerTransistors. MJ2955 – Bipolar (BJT) Transistor PNP 60 V 15 A 115 W Chassis Mount TO-3 from NTE Electronics, Inc. com, a global distributor of electronics components. 1V (Maximum) at IC = 4. 2N3055, MJ2955 by STMicroelectronics Datasheet | DigiKey Login or REGISTER Hello, {0} Account & Lists Attribute. . Pricing and Availability on millions of electronic components from Digi-Key Electronics. 2N3055, MJ2955 by STMicroelectronics Datasheet | DigiKey Login or REGISTER Hello, {0} Account & Lists Aug 15, 2021 · How to make fish shock Electric machine by using transistor MJ2955 x 8 (part1) Bipolar Transistors - BJT PNP Power Switching. Collector 3. SILICON PLANAR POWER TRANSISTORS, MJ2955 Datasheet, MJ2955 circuit, MJ2955 data sheet : CDIL, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. This article enforces datasheet, pinout, applications, schematic, and other details about MJ2955. 1 Vdc (Max) @ IC = 4 Adc• Excellent Safe Operating AreaMAXIMUM RATINGS Datasheet search, datasheets, Datasheet search site for From old datasheet system: Diotec Semiconductor AG SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] Siemens Semiconductor G BD135 BD139 ON0184 BD137 : Plastic Medium Power Silicon NPN Transistor 1. limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Power T ransistors. File Size: 154Kbytes. 1 Vdc (Max) @ IC = 4 Adc. Hoja de especificaciones. Equivalente. Description: Complementary Silicon Power Transistors. Manufacturer: SGS-Thomson Microelectronics. Description. 1 Vdc (Max) @ IC = 4 Adc Download the MJ2955 datasheet from Multicomp. 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. com] :-) [ View it Online ] [ Search more for MJ2955 ] [ Price & Availability of MJ2955 by FindChips. Aug 17, 2021 · The MJ2955 is a silicon PNP transistor in a TO−3 type case designed for general purpose switching and amplifier applications. Manufacturer MJ2955: The MJ2955 is a complementary PNP transistor to the 2N3055 and can be used as a replacement for the TIP32 in some cases. View 2N3055, MJ2955 by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey. Company: ON Semiconductor Datasheet: Download MJ2955 Datasheet: Cross ref. Operational temperature range from -65 ° C to 200 ° C. This article enforces datasheet, pinout, applications, schematic, and other details about MJ2955 onsemi Bipolar Transistors - BJT 15A 60V 115W PNP datasheet, inventory & pricing. MJ2955. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any Transistor, PNP, TO-3 2N3055_MJ2955 datasheet. DC Current Gain Specified to I C = 10 A High Current Gain Bandwidth Product : f T = 2MHz (Min. Similar parts: ECG219, MJ15016, 2N3198, 2N4901, 2N4902, 2N4903, 2N4904, 2N4905, 2N4906, 2N622: Quote 2N3055_MJ2955 Product details. Complementar y Silicon. • VCE (sat) = 1. MJ2955 onsemi Bipolar Transistors - BJT 15A 60V 115W PNP datasheet, inventory, & pricing. Where to use the 2N3055 Transistor? This transistor is ideal for medium current and high power circuit applications. NPN transistor for power switching circuits, 60V, 15A in 3-pin TO-3 package. Excellent Safe Operating Area Pb−Free Packages are Available*. File Size: 81Kbytes. You can replace the MJ2955 with the 2N5879, Datasheet: Description: Mospec Semiconductor: MJE2955: 123Kb / 3P: POWER TRANSISTORS(10A,60V,75W) Fairchild Semiconductor: MJE2955: 37Kb / 4P: General Purpose and Switching Applications Jiangsu Changjiang Elec MJE2955: 1Mb / 3P: TO-220-3L Plastic-Encapsulate Transistors Micro Commercial Compon MJE2955: 252Kb / 2P: PNP Silicon Plastic View 2N3055, MJ2955 by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey. Manufacturer: Mospec Semiconductor. 2N3055 series datasheets. * Maximum Working Voltage This is a shortform datasheet. At high case temperatures, thermal. Description: POWER TRANSISTORS(25A,40-100V,125W). INTE RNAL SCHEMATIC DIAGRAM About Central Semiconductor Corp. MJ2955 Datasheet (PDF) - Motorola, Inc: Part # MJ2955 MJ2955: 112Kb / 3P: isc Silicon PNP Power Transistors Savantic, Inc. ax zy hn ds hs pq ic tq mz on